Low temperature process for high density thin film integrated capacitors, and amorphously frustrated ferroelectric materials therefor
A Standard patent application filed on 15 December 2000 credited to Hendrix, Bryan C.

Details

Application number :
21075  
Application type :
Standard  
Application status :
LAPSED  
Under opposition :
No  
Proceeding type :
 
Invention title :
Low temperature process for high density thin film integrated capacitors, and amorphously frustrated ferroelectric materials therefor  
Inventor :
Hendrix, Bryan C.  
Agent name :
 
Address for service :
 
Filing date :
15 December 2000  
Associated companies :
 
Applicant name :
Advanced Technology Materials, Inc.  
Applicant address :
 
Old name :
 
Original Source :
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Same Inventor