Metalloamide and aminosilane precursors for cvd formation of dielectric thin films
A Standard patent application filed on 27 March 2002 credited to Hendrix, Bryan C. ; Baum, Thomas H. ; Roeder, Jeffrey F. ; Xu, Chongying

Details

Application number :

2002258624  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Metalloamide and aminosilane precursors for cvd formation of dielectric thin films  

Inventor :

Hendrix, Bryan C. ; Baum, Thomas H. ; Roeder, Jeffrey F. ; Xu, Chongying  

Agent name :

 

Address for service :

 

Filing date :

27 March 2002  

Associated companies :

 

Applicant name :

ADVANCED TECHNOLOGY MATERIALS, INC.  

Applicant address :

7 Comerce Drive, Danbury, CT 06810  

Old name :

 

Original Source :

Go  

Same Inventor

• Source reagent composition for cvd formation of zr/hf doped gate...