Barrier structures for integration of high k oxides with cu and ai electrodes
A Standard patent application filed on 06 May 2002 credited to Hendrix, Bryan C. ; Roeder, Jeffrey F. ; Chen, Ing-Shin ; Stauf, Gregory T.

Details

Application number :

2002303621  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Barrier structures for integration of high k oxides with cu and ai electrodes  

Inventor :

Hendrix, Bryan C. ; Roeder, Jeffrey F. ; Chen, Ing-Shin ; Stauf, Gregory T.  

Agent name :

 

Address for service :

 

Filing date :

06 May 2002  

Associated companies :

 

Applicant name :

ADVANCED TECHNOLOGY MATERIALS, INC.  

Applicant address :

7 Commerce Drive, Danbury, CN 06810  

Old name :

 

Original Source :

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