Silicon reagents and low temperature cvd method of forming silicon-containing gate dielectric materials using same
A Standard patent application filed on 09 April 2001 credited to Hendrix, Bryan C. ; Baum, Thomas H. ; Xu, Chong-Ying

Details

Application number :

2001251457  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Silicon reagents and low temperature cvd method of forming silicon-containing gate dielectric materials using same  

Inventor :

Hendrix, Bryan C. ; Baum, Thomas H. ; Xu, Chong-Ying  

Agent name :

 

Address for service :

 

Filing date :

09 April 2001  

Associated companies :

 

Applicant name :

Advanced Technology Materials, Inc.  

Applicant address :

 

Old name :

 

Original Source :

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