Source reagent composition for cvd formation of zr/hf doped gate dielectric and high dielectric constant metal oxide thin films and method of using same
A Standard patent application filed on 19 February 2002 credited to Hendrix, Bryan C. ; Xu, Chongying ; Wang, Ziyun ; Baum, Thomas H. ; Paw, Witold ; Roeder, Jeffrey F.

Details

Application number :

2002250122  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Source reagent composition for cvd formation of zr/hf doped gate dielectric and high dielectric constant metal oxide thin films and method of using same  

Inventor :

Hendrix, Bryan C. ; Xu, Chongying ; Wang, Ziyun ; Baum, Thomas H. ; Paw, Witold ; Roeder, Jeffrey F.  

Agent name :

 

Address for service :

 

Filing date :

19 February 2002  

Associated companies :

 

Applicant name :

ADVANCED TECHNOLOGY MATERIALS, INC.  

Applicant address :

7 Commerce Drive, Danbury, CT 06810  

Old name :

 

Original Source :

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