Metal organic chemical vapor deposition and atomic layer deposition of metal oxynitride and metal silicon oxynitride
A Standard patent application filed on 16 July 2003 credited to Senzaki, Yoshihide ; Lee, Sang-In

Details

Application number :

2003249254  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Metal organic chemical vapor deposition and atomic layer deposition of metal oxynitride and metal silicon oxynitride  

Inventor :

Senzaki, Yoshihide ; Lee, Sang-In  

Agent name :

 

Address for service :

 

Filing date :

16 July 2003  

Associated companies :

 

Applicant name :

Aviza Technology, Inc.  

Applicant address :

440 Kings Village Road Scotts Valley, CA 95066 United States of America  

Old name :

 

Original Source :

Go  

Same Inventor

• Atomic layer deposition of high k dielectric films
• Atomic layer deposition of multi-metallic precursors
• Atomic layer deposition of high k metal silicates
• Low termperature deposition of silicon oxides and oxynitrides
• Atomic layer deposition of high k metal oxides