Plasma etching method and plasma etching device
A Standard patent application filed on 07 April 2003 credited to Hayashi, Hisataka ; Matsuyama, Shoichiro ; Honda, Masanobu ; Nagaseki, Kazuya

Details

Application number :

2003236307  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Plasma etching method and plasma etching device  

Inventor :

Hayashi, Hisataka ; Matsuyama, Shoichiro ; Honda, Masanobu ; Nagaseki, Kazuya  

Agent name :

 

Address for service :

 

Filing date :

07 April 2003  

Associated companies :

 

Applicant name :

TOKYO ELECTRON LIMITED  

Applicant address :

3-6, Akasaka 5-chome, Minato-ku, Tokyo 107-8481  

Old name :

 

Original Source :

Go  

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