Semiconductor device fabricated on surface of silicon having less than110greater than direction of crystal plane and its production method
A Standard patent application filed on 02 October 2002 credited to Ohmi, Tadahiro ; Sugawa, Shigetoshi

Details

Application number :
2002335177  
Application type :
Standard  
Application status :
LAPSED  
Under opposition :
No  
Proceeding type :
 
Invention title :
Semiconductor device fabricated on surface of silicon having less than110greater than direction of crystal plane and its production method  
Inventor :
Ohmi, Tadahiro ; Sugawa, Shigetoshi  
Agent name :
 
Address for service :
 
Filing date :
02 October 2002  
Associated companies :
 
Applicant name :
OHMI, Tadahiro  
Applicant address :
1-17-301, Komegafukuro 2-Chome, Aoba-Ku, Sendai-Shi, Miyagi 980-0813  
Old name :
 
Original Source :
Go  

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