Dielectric film and method of forming it, semiconductor device, nonvolatile semiconductor memory device, and production method for semiconductor device
A Standard patent application filed on 27 December 2001 credited to Hirayama, Masaki ; Shirai, Yasuyuki ; Ohmi, Tadahiro ; Sugawa, Shigetoshi

Details

Application number :

2002219548  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Dielectric film and method of forming it, semiconductor device, nonvolatile semiconductor memory device, and production method for semiconductor device  

Inventor :

Hirayama, Masaki ; Shirai, Yasuyuki ; Ohmi, Tadahiro ; Sugawa, Shigetoshi  

Agent name :

 

Address for service :

 

Filing date :

27 December 2001  

Associated companies :

 

Applicant name :

OHMI, Tadahiro  

Applicant address :

1-17-301, Komegafukuro 2-Chome, Aoba-Ku, Sendai-Shi, Miyagi 980-0813  

Old name :

 

Original Source :

Go