Methods of fabricating gallium nitride layers on textured silicon substrates, and gallium nitride semiconductor structures fabricated thereby
A Standard patent application filed on 13 December 2000 credited to Gehrke, Thomas ; Davis, Robert F ; Linthicum, Kevin J.

Details

Application number :
24304  
Application type :
Standard  
Application status :
LAPSED  
Under opposition :
No  
Proceeding type :
 
Invention title :
Methods of fabricating gallium nitride layers on textured silicon substrates, and gallium nitride semiconductor structures fabricated thereby  
Inventor :
Gehrke, Thomas ; Davis, Robert F ; Linthicum, Kevin J.  
Agent name :
 
Address for service :
 
Filing date :
13 December 2000  
Associated companies :
 
Applicant name :
North Carolina State University  
Applicant address :
 
Old name :
 
Original Source :
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Same Inventor