Fabrication of gallium nitride layers by lateral growth
A Standard patent application filed on 23 November 1999 credited to Linthicum, Kevin J.
;
Gehrke, Thomas
;
Davis, Robert F
;
Carlson, Eric P.
;
Rajagopal, Pradeep
;
Thomson, Darren B.
Details
Application number :
23491
Application type :
Standard
Application status :
LAPSED
Under opposition :
No
Proceeding type :
Invention title :
Fabrication of gallium nitride layers by lateral growth
Inventor :
Linthicum, Kevin J.
;
Gehrke, Thomas
;
Davis, Robert F
;
Carlson, Eric P.
;
Rajagopal, Pradeep
;
Thomson, Darren B.