Pendeoepitaxial growth of gallium nitride layers on sapphire substrates
A Standard patent application filed on 04 October 2000 credited to Gehrke, Thomas ; Davis, Robert F ; Linthicum, Kevin J.

Details

Application number :

79929  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Pendeoepitaxial growth of gallium nitride layers on sapphire substrates  

Inventor :

Gehrke, Thomas ; Davis, Robert F ; Linthicum, Kevin J.  

Agent name :

 

Address for service :

 

Filing date :

04 October 2000  

Associated companies :

 

Applicant name :

North Carolina State University  

Applicant address :

 

Old name :

 

Original Source :

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