Toggle navigation
PATENT LOOKUP
Home
About
Search Tips
Search
Chemical vapor deposition method
A Standard patent application filed on 30 December 1986 credited to Ohtoshi, Hirokazu ; Shimizu, Isamu ; Hanna, Junichi
Details
Application number :
67063
Application type :
Standard
Application status :
EXPIRED
Under opposition :
No
Proceeding type :
Invention title :
Chemical vapor deposition method
Inventor :
Ohtoshi, Hirokazu ; Shimizu, Isamu ; Hanna, Junichi
Agent name :
SPRUSON & FERGUSON
Address for service :
GPO Box 3898 SYDNEY NSW 2001
Filing date :
30 December 1986
Associated companies :
Applicant name :
Canon Kabushiki Kaisha
Applicant address :
30-2, 3-Chome, Shimomaruko, Ohta-Ku, Tokyo, Japan
Old name :
Original Source :
Go
Related Patents
Chemical vapor deposition method and apparatus
Plasma chemical vapor deposition methods and apparatus
Chemical vapor deposition method and coatings produced therefrom
Chemical vapor deposition method of growing oxide films with giant...
Improved chemical vapor deposition method of producing...
Same Inventor
Multilayer films by optical CVD
Thin-film transistor
PATENT LOOKUP
Home
Browse
About
Search Tips