Tantalum and tantalum-based films formed using fluorine-containing source precursors and methods of making the same
A Standard patent application filed on 16 May 2000 credited to Kaloyeros, Alain E ; Arkles, Barry C

Details

Application number :

50192  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Tantalum and tantalum-based films formed using fluorine-containing source precursors and methods of making the same  

Inventor :

Kaloyeros, Alain E ; Arkles, Barry C  

Agent name :

 

Address for service :

 

Filing date :

16 May 2000  

Associated companies :

 

Applicant name :

Gelest, Inc.  

Applicant address :

 

Old name :

 

Original Source :

Go  

Same Inventor

• Chemical vapor deposition of tungsten nitride
• Conformal titanium-based films and method for their preparation
• Silicon nitrogen-based films and method of making the same