Method for the growth of a thin silicon oxide layer on a silicon substrate surface and double reactor machine
A Standard patent application filed on 03 May 2000 credited to Korwin-Pawlowski, Michael ; Borsoni, Gilles ; Lazzari, Jean-Pierre

Details

Application number :
45741  
Application type :
Standard  
Application status :
LAPSED  
Under opposition :
No  
Proceeding type :
 
Invention title :
Method for the growth of a thin silicon oxide layer on a silicon substrate surface and double reactor machine  
Inventor :
Korwin-Pawlowski, Michael ; Borsoni, Gilles ; Lazzari, Jean-Pierre  
Agent name :
 
Address for service :
 
Filing date :
03 May 2000  
Associated companies :
 
Applicant name :
X-Ion  
Applicant address :
 
Old name :
 
Original Source :
Go  

Same Inventor