Trench mosfet having implanted drain-drift region and process for manufacturing the same
A Standard patent application filed on 12 December 2003 credited to Darwish, Mohamed N.

Details

Application number :
2003296987  
Application type :
Standard  
Application status :
LAPSED  
Under opposition :
No  
Proceeding type :
 
Invention title :
Trench mosfet having implanted drain-drift region and process for manufacturing the same  
Inventor :
Darwish, Mohamed N.  
Agent name :
 
Address for service :
 
Filing date :
12 December 2003  
Associated companies :
 
Applicant name :
SILICONIX INCORPORATED  
Applicant address :
2201 Laurelwood Road, Santa Clara, CA 95054  
Old name :
 
Original Source :
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Same Inventor