Trench mis device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same
A Standard patent application filed on 15 December 2003 credited to Qi, Jainhai ; Darwish, Mohamed N. ; Terrill, Kyle W.

Details

Application number :

2003300924  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Trench mis device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same  

Inventor :

Qi, Jainhai ; Darwish, Mohamed N. ; Terrill, Kyle W.  

Agent name :

 

Address for service :

 

Filing date :

15 December 2003  

Associated companies :

 

Applicant name :

SILICONIX INCORPORATED  

Applicant address :

2201 Laurelwood Road, Santa Clara, CA 95054  

Old name :

 

Original Source :

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