Power mosfet having a trench gate electrode and method of making the same
A Standard patent application filed on 21 June 2002 credited to Darwish, Mohamed N.

Details

Application number :

2002310514  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Power mosfet having a trench gate electrode and method of making the same  

Inventor :

Darwish, Mohamed N.  

Agent name :

 

Address for service :

 

Filing date :

21 June 2002  

Associated companies :

 

Applicant name :

SILICONIX, INC.  

Applicant address :

2201 Laurelwood Road, Santa Clara, CA 95054-1595  

Old name :

 

Original Source :

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