A method of preparing a thin layer, the method including a step of correcting thickness by sacrificial oxidation, and an associated machine
A Standard patent application filed on 11 August 2003 credited to Osternaud, Benedite ; Aulnette, Cecile ; Ghyselen, Bruno

Details

Application number :

2003263391  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

A method of preparing a thin layer, the method including a step of correcting thickness by sacrificial oxidation, and an associated machine  

Inventor :

Osternaud, Benedite ; Aulnette, Cecile ; Ghyselen, Bruno  

Agent name :

 

Address for service :

 

Filing date :

11 August 2003  

Associated companies :

 

Applicant name :

S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES  

Applicant address :

Parc Technologique des Fontaines, Chemin des Franques, F-38190 Bernin  

Old name :

 

Original Source :

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Same Inventor

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• Transfer of a thin layer from a wafer comprising a buffer layer