Method for manufacturing silicon nitride film using chemical vapor deposition apparatus of single chamber type
A Standard patent application filed on 06 February 2003 credited to Um, Pyung-Yong

Details

Application number :
2003208031  
Application type :
Standard  
Application status :
LAPSED  
Under opposition :
No  
Proceeding type :
 
Invention title :
Method for manufacturing silicon nitride film using chemical vapor deposition apparatus of single chamber type  
Inventor :
Um, Pyung-Yong  
Agent name :
 
Address for service :
 
Filing date :
06 February 2003  
Associated companies :
 
Applicant name :
EUGENE TECHNOLOGY CO., LTD.  
Applicant address :
4-3 Chaam-Dong, Cheonan 330-200  
Old name :
 
Original Source :
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Same Inventor