Improved high k-dielectrics using nickel silicide
A Standard patent application filed on 05 April 2002 credited to Paton, Eric N. ; Foster, John Clayton ; Xiang, Qi ; King, Paul L. ; Besser, Paul R. ; Buynoski, Matthew S.

Details

Application number :

2002303225  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Improved high k-dielectrics using nickel silicide  

Inventor :

Paton, Eric N. ; Foster, John Clayton ; Xiang, Qi ; King, Paul L. ; Besser, Paul R. ; Buynoski, Matthew S.  

Agent name :

 

Address for service :

 

Filing date :

05 April 2002  

Associated companies :

 

Applicant name :

ADVANCED MICRO DEVICES, INC.  

Applicant address :

One AMD Place, Mail Stop 68, P.O. Box 3453, Sunnyvale, CA 94088-3453  

Old name :

 

Original Source :

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