Damascene nisi metal gate high-k transistor
A Standard patent application filed on 03 December 2001 credited to Paton, Eric N. ; Foster, John Clayton ; Xiang, Qi ; King, Paul L. ; Besser, Paul R. ; Buynosky, Matthew S.

Details

Application number :

2002228811  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Damascene nisi metal gate high-k transistor  

Inventor :

Paton, Eric N. ; Foster, John Clayton ; Xiang, Qi ; King, Paul L. ; Besser, Paul R. ; Buynosky, Matthew S.  

Agent name :

 

Address for service :

 

Filing date :

03 December 2001  

Associated companies :

 

Applicant name :

Advanced Micro Devices Inc.  

Applicant address :

 

Old name :

 

Original Source :

Go  

Same Inventor

• Gate electrode silicidation layer
• Silicide stop layer in a damascene gate semiconductor structure
• Improved high k-dielectrics using nickel silicide