Silicide stop layer in a damascene gate semiconductor structure
A Standard patent application filed on 13 November 2001 credited to Paton, Eric N. ; Foster, John Clayton ; Xiang, Qi ; King, Paul L. ; Besser, Paul R. ; Buynoski, Matthew S.

Details

Application number :
2002219836  
Application type :
Standard  
Application status :
LAPSED  
Under opposition :
No  
Proceeding type :
 
Invention title :
Silicide stop layer in a damascene gate semiconductor structure  
Inventor :
Paton, Eric N. ; Foster, John Clayton ; Xiang, Qi ; King, Paul L. ; Besser, Paul R. ; Buynoski, Matthew S.  
Agent name :
 
Address for service :
 
Filing date :
13 November 2001  
Associated companies :
 
Applicant name :
ADVANCED MICRO DEVICES, INC.  
Applicant address :
One AMD Place, Mail Stop 68, P.O. Box 3453, Sunnyvale, CA 94088-3453  
Old name :
 
Original Source :
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