Method of manufacturing single-crystal silicon carbide
A Standard patent application filed on 24 December 1999 credited to Shigeto, Masashi ; Nagato, Nobuyuki ; Yano, Kotaro

Details

Application number :

18010  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Method of manufacturing single-crystal silicon carbide  

Inventor :

Shigeto, Masashi ; Nagato, Nobuyuki ; Yano, Kotaro  

Agent name :

 

Address for service :

 

Filing date :

24 December 1999  

Associated companies :

 

Applicant name :

Showa Denko Kabushiki Kaisha  

Applicant address :

 

Old name :

 

Original Source :

Go  

Same Inventor

• Method and apparatus for producing single crystal of silicon carbide
• Method for growing single crystal of silicon carbide