Method for growing single crystal of silicon carbide
A Standard patent application filed on 24 December 1999 credited to Yano, Kotaro ; Nagato, Nobuyuki ; Shigeto, Masashi ; Yamamoto, Isamu

Details

Application number :

18011  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Method for growing single crystal of silicon carbide  

Inventor :

Yano, Kotaro ; Nagato, Nobuyuki ; Shigeto, Masashi ; Yamamoto, Isamu  

Agent name :

 

Address for service :

 

Filing date :

24 December 1999  

Associated companies :

 

Applicant name :

Showa Denko Kabushiki Kaisha  

Applicant address :

 

Old name :

 

Original Source :

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