Dmos transistor having a trench gate electrode and method of making the same
A Standard patent application filed on 16 March 2001 credited to Hshieh, Fwu-Iuan ; Tsui, Yan Man ; So, Koon Chong

Details

Application number :

2001251720  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Dmos transistor having a trench gate electrode and method of making the same  

Inventor :

Hshieh, Fwu-Iuan ; Tsui, Yan Man ; So, Koon Chong  

Agent name :

 

Address for service :

 

Filing date :

16 March 2001  

Associated companies :

 

Applicant name :

General Semiconductor, Inc.  

Applicant address :

 

Old name :

 

Original Source :

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