Trench mosfet with structure having low gate charge
A Standard patent application filed on 29 August 2001 credited to Hshieh, Fwu-Iuan ; Tsui, Yan Man ; So, Koon Chong

Details

Application number :
2001285335  
Application type :
Standard  
Application status :
LAPSED  
Under opposition :
No  
Proceeding type :
 
Invention title :
Trench mosfet with structure having low gate charge  
Inventor :
Hshieh, Fwu-Iuan ; Tsui, Yan Man ; So, Koon Chong  
Agent name :
 
Address for service :
 
Filing date :
29 August 2001  
Associated companies :
 
Applicant name :
General Semiconductor, Inc.  
Applicant address :
 
Old name :
 
Original Source :
Go  

Same Inventor