Node-precise voltage regulation for a mos memory system
A Standard patent application filed on 23 June 1998 credited to Lee, Peter W
;
Hsu, Fu-Chang
;
Tsao, Hsing-Ya
Details
Application number :
81607
Application type :
Standard
Application status :
LAPSED
Under opposition :
No
Proceeding type :
Invention title :
Node-precise voltage regulation for a mos memory system