Material for forming silica-base coated insulation film, process for producing the material, silica-base insulation film, semiconductor device, and process for producing the device
A Standard patent application filed on 30 June 1995 credited to Matsuzawa, Jun

Details

Application number :
34600  
Application type :
Standard  
Application status :
LAPSED  
Under opposition :
No  
Proceeding type :
 
Invention title :
Material for forming silica-base coated insulation film, process for producing the material, silica-base insulation film, semiconductor device, and process for producing the device  
Inventor :
Matsuzawa, Jun  
Agent name :
 
Address for service :
 
Filing date :
30 June 1995  
Associated companies :
 
Applicant name :
Hitachi Chemical Company, Ltd.  
Applicant address :
 
Old name :
 
Original Source :
Go  

Same Inventor