Method for doping gallium nitride (gan) substrates and the resulting doped gan substrate

Application number :: 60872
Application type :: Standard
Application status :: LAPSED
Under opposition :: No
Proceeding type :
Invention title :: Method for doping gallium nitride (gan) substrates and the resulting doped gan substrate
Inventor :: Cho, Hak Dong ; Kang, Sang Kyu
Agent name :
Address for service :
Filing date :: 12 July 2000
Associated companies :
Applicant name :: Gan Semiconductor, Inc.
Applicant address :
Old name :
Original Source :: Go

Method for doping gallium nitride (gan) substrates and the resulting doped gan substrate A Standard patent application filed on 12 July 2000 credited to Cho, Hak Dong ; Kang, Sang Kyu