Method for doping gallium nitride (gan) substrates and the resulting doped gan substrate

Application number :: 2003205215
Application type :: Standard
Application status :: LAPSED
Under opposition :: No
Proceeding type :
Invention title :: Method for doping gallium nitride (gan) substrates and the resulting doped gan substrate
Inventor :: Kang, Sang Kyu ; Cho, Hak Dong
Agent name :
Address for service :
Filing date :: 16 January 2003
Associated companies :
Applicant name :: GAN SEMICONDUCTOR, INC.
Applicant address :: 1275 Reamwood Drive, Sunnyvale,CA 94086
Old name :
Original Source :: Go

Method for doping gallium nitride (gan) substrates and the resulting doped gan substrate A Standard patent application filed on 16 January 2003 credited to Kang, Sang Kyu ; Cho, Hak Dong