Details

Application number :
2003303885  
Application type :
Standard  
Application status :
LAPSED  
Under opposition :
No  
Proceeding type :
 
Invention title :
Semiconductor substrate, field-effect transistor, and their production methods  
Inventor :
Kougami, Hazumu ; Ninomiya, Masaharu ; Shiono, Ichiro  
Agent name :
 
Address for service :
 
Filing date :
06 February 2003  
Associated companies :
 
Applicant name :
SUMITOMO MITSUBISHI SILICON CORPORATION  
Applicant address :
2-1, Shibaura 1-chome, Minato-ku, Tokyo 105-8634  
Old name :
 
Original Source :
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