Method for producing semiconductor substrate and method for fabricating field effect transistor and semiconductor substrate and field effect transistor
A Standard patent application filed on 29 November 2002 credited to Kougami, Hazumu ; Ninomiya, Masaharu ; Shiono, Ichiro

Details

Application number :

2002354318  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Method for producing semiconductor substrate and method for fabricating field effect transistor and semiconductor substrate and field effect transistor  

Inventor :

Kougami, Hazumu ; Ninomiya, Masaharu ; Shiono, Ichiro  

Agent name :

 

Address for service :

 

Filing date :

29 November 2002  

Associated companies :

 

Applicant name :

SUMITOMO MITSUBISHI SILICON CORPORATION  

Applicant address :

2-1, Shibaura 1-chome, Minato-ku, Tokyo 105-8634  

Old name :

 

Original Source :

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