Notch-free etching of high aspect soi structures using alternating deposition and etching and pulsed plasma
A Standard patent application filed on 10 July 2003 credited to Johnson, David ; Lai, Shouliang ; Westerman, Russell

Details

Application number :

2003283060  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Notch-free etching of high aspect soi structures using alternating deposition and etching and pulsed plasma  

Inventor :

Johnson, David ; Lai, Shouliang ; Westerman, Russell  

Agent name :

 

Address for service :

 

Filing date :

10 July 2003  

Associated companies :

 

Applicant name :

UNAXIS USA, INC.  

Applicant address :

10050 16th Street North, St. Petersburg, FL 33718  

Old name :

 

Original Source :

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