Sidewall smoothing in high aspect ratio/deep etching using a discreet gas switching method
A Standard patent application filed on 13 August 2003 credited to Johnson, David ; Lai, Shouliang ; Westerman, Russell

Details

Application number :

2003282781  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Sidewall smoothing in high aspect ratio/deep etching using a discreet gas switching method  

Inventor :

Johnson, David ; Lai, Shouliang ; Westerman, Russell  

Agent name :

 

Address for service :

 

Filing date :

13 August 2003  

Associated companies :

 

Applicant name :

UNAXIS USA, INC.  

Applicant address :

10050 16th Street North, St. Petersburg, FL 33718  

Old name :

 

Original Source :

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