A method of forming base regions and emitter windows in silicon bipolar transistors
A Standard patent application filed on 06 May 2003 credited to Johansson, Ted ; Norstrom, Hans

Details

Application number :

2003224582  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

A method of forming base regions and emitter windows in silicon bipolar transistors  

Inventor :

Johansson, Ted ; Norstrom, Hans  

Agent name :

 

Address for service :

 

Filing date :

06 May 2003  

Associated companies :

 

Applicant name :

TELEFONAKTIEBOLAGET LM ERICSSON (PUBL)  

Applicant address :

S-164 83 Stockholm Sweden  

Old name :

 

Original Source :

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