Semiconductor device having a retrograde dopant profile in a channel region and method for fabricating the same
A Standard patent application filed on 20 December 2002 credited to Wieczorek, Karsten
;
Stephan, Rolf
;
Horstmann, Manfred
Details
Application number :
2002357376
Application type :
Standard
Application status :
LAPSED
Under opposition :
No
Proceeding type :
Invention title :
Semiconductor device having a retrograde dopant profile in a channel region and method for fabricating the same