Method for ion beam fine patterning of inorganic multilayer resist, and semiconductor device, quantum device, micromachine component and fine structure manufactured by the method
A Standard patent application filed on 10 December 2002 credited to Sano, Naokatsu ; Asaoka, Yasushi ; Kaneko, Tadaaki

Details

Application number :
2002354455  
Application type :
Standard  
Application status :
LAPSED  
Under opposition :
No  
Proceeding type :
 
Invention title :
Method for ion beam fine patterning of inorganic multilayer resist, and semiconductor device, quantum device, micromachine component and fine structure manufactured by the method  
Inventor :
Sano, Naokatsu ; Asaoka, Yasushi ; Kaneko, Tadaaki  
Agent name :
 
Address for service :
 
Filing date :
10 December 2002  
Associated companies :
 
Applicant name :
THE NEW INDUSTRY RESEARCH ORGANIZATION  
Applicant address :
1-5-2, Minatojima-minamimachi, Chuo-ku, Kobe-shi, Hyogo 650-0047  
Old name :
 
Original Source :
Go  

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