Nitriding method for insulation film, semiconductor device and production method for semiconductor device, substrate treating device and substrate treating method
A Standard patent application filed on 05 December 2002 credited to Shinriki, Hiroshi ; Takahashi, Tsuyoshi ; Aoyama, Shintaro ; Igeta, Masanobu

Details

Application number :
2002354103  
Application type :
Standard  
Application status :
LAPSED  
Under opposition :
No  
Proceeding type :
 
Invention title :
Nitriding method for insulation film, semiconductor device and production method for semiconductor device, substrate treating device and substrate treating method  
Inventor :
Shinriki, Hiroshi ; Takahashi, Tsuyoshi ; Aoyama, Shintaro ; Igeta, Masanobu  
Agent name :
 
Address for service :
 
Filing date :
05 December 2002  
Associated companies :
 
Applicant name :
TOKYO ELECTRON LIMITED  
Applicant address :
3-6, Akasaka 5-Chome, Minato-Ku, Tokyo 107-8481  
Old name :
 
Original Source :
Go  

Same Inventor