Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands
A Standard patent application filed on 03 October 2002 credited to Blanchard, Richard A. ; Guillot, Jean-Michel

Details

Application number :

2002347807  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands  

Inventor :

Blanchard, Richard A. ; Guillot, Jean-Michel  

Agent name :

 

Address for service :

 

Filing date :

03 October 2002  

Associated companies :

 

Applicant name :

GENERAL SEMICONDUCTOR, INC.  

Applicant address :

10 Melville Park Road, Melville, NY 11747-3113  

Old name :

 

Original Source :

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