Method for fabricating a power semiconductor device having a floating island voltage sustaining layer

Application number :: 2002334821
Application type :: Standard
Application status :: LAPSED
Under opposition :: No
Proceeding type :
Invention title :: Method for fabricating a power semiconductor device having a floating island voltage sustaining layer
Inventor :: Blanchard, Richard A. ; Guillot, Jean-Michel
Agent name :
Address for service :
Filing date :: 03 October 2002
Associated companies :
Applicant name :: GENERAL SEMICONDUCTOR, INC.
Applicant address :: 10 Melville Park Road, Melville, NY 11747-3113
Old name :
Original Source :: Go

Method for fabricating a power semiconductor device having a floating island voltage sustaining layer A Standard patent application filed on 03 October 2002 credited to Blanchard, Richard A. ; Guillot, Jean-Michel