Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
A Standard patent application filed on 21 August 2001 credited to Boguslavskiy, Vadim
;
Gurary, Alexander
Details
Application number :
2001285127
Application type :
Standard
Application status :
LAPSED
Under opposition :
No
Proceeding type :
Invention title :
Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition