Schottky diode having increased active surface area and method of fabrication

Application number :: 2001280492
Application type :: Standard
Application status :: LAPSED
Under opposition :: No
Proceeding type :
Invention title :: Schottky diode having increased active surface area and method of fabrication
Inventor :: Chern, Geeng-Chuan ; Hseuh, Wayne Y. W. ; Rodov, Vladimir ; Chang, Paul
Agent name :
Address for service :
Filing date :: 06 July 2001
Associated companies :
Applicant name :: Advanced Power Devices
Applicant address :
Old name :
Original Source :: Go

Schottky diode having increased active surface area and method of fabrication A Standard patent application filed on 06 July 2001 credited to Chern, Geeng-Chuan ; Hseuh, Wayne Y. W. ; Rodov, Vladimir ; Chang, Paul