Schottky diode having increased active surface area with improved reverse bias characteristics and method of fabrication
A Standard patent application filed on 06 July 2001 credited to Chern, Geeng-Chuan ; Hseuh, Wayne Y. W. ; Rodov, Vladimir ; Chang, Paul

Details

Application number :
2001271879  
Application type :
Standard  
Application status :
LAPSED  
Under opposition :
No  
Proceeding type :
 
Invention title :
Schottky diode having increased active surface area with improved reverse bias characteristics and method of fabrication  
Inventor :
Chern, Geeng-Chuan ; Hseuh, Wayne Y. W. ; Rodov, Vladimir ; Chang, Paul  
Agent name :
 
Address for service :
 
Filing date :
06 July 2001  
Associated companies :
 
Applicant name :
Advanced Power Devices  
Applicant address :
 
Old name :
 
Original Source :
Go  

Same Inventor