Methods for forming rough ruthenium-containing layers and structures/methods using same
A Standard patent application filed on 07 June 2001 credited to Agarwal, Vishnu K. ; Derderian, Garo

Details

Application number :
2001267039  
Application type :
Standard  
Application status :
LAPSED  
Under opposition :
No  
Proceeding type :
 
Invention title :
Methods for forming rough ruthenium-containing layers and structures/methods using same  
Inventor :
Agarwal, Vishnu K. ; Derderian, Garo  
Agent name :
 
Address for service :
 
Filing date :
07 June 2001  
Associated companies :
 
Applicant name :
Micron Technology, Inc.  
Applicant address :
 
Old name :
 
Original Source :
Go  

Same Inventor