Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
A Standard patent application filed on 07 June 2001 credited to Basceri, Cem ; Derderian, Garo ; Sandhu, Gurtej S. ; Li, Weimin M. ; Yang, Sam ; Agarwal, Vishnu K. ; Visokay, Mark

Details

Application number :

2001275398  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers  

Inventor :

Basceri, Cem ; Derderian, Garo ; Sandhu, Gurtej S. ; Li, Weimin M. ; Yang, Sam ; Agarwal, Vishnu K. ; Visokay, Mark  

Agent name :

 

Address for service :

 

Filing date :

07 June 2001  

Associated companies :

 

Applicant name :

Micron Technology, Inc.  

Applicant address :

 

Old name :

 

Original Source :

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