Multiple-thickness gate oxide formed by oxygen implantation
A Standard patent application filed on 29 November 1999 credited to King, Ya-Chin
;
Hu, Chen Ming
;
King, Tsu-Jae
Details
Application number :
17474
Application type :
Standard
Application status :
LAPSED
Under opposition :
No
Proceeding type :
Invention title :
Multiple-thickness gate oxide formed by oxygen implantation