Method of controlling metallic layer etching process and regenerating etchant for metallic layer etching process based on near infrared spectrometer

Application number :: 2001244788
Application type :: Standard
Application status :: LAPSED
Under opposition :: No
Proceeding type :
Invention title :: Method of controlling metallic layer etching process and regenerating etchant for metallic layer etching process based on near infrared spectrometer
Inventor :: Kim, Byung-Uk ; Oh, Chang-Il ; Park, Mi-Sun ; Lee, Ki-Beom ; Kim, Jong-Min
Agent name :
Address for service :
Filing date :: 27 March 2001
Associated companies :
Applicant name :: DONGJIN SEMICHEM CO., LTD.
Applicant address :: Gajwa-dong 472-2, Seo-ku, Incheon 404-253
Old name :
Original Source :: Go

Method of controlling metallic layer etching process and regenerating etchant for metallic layer etching process based on near infrared spectrometer A Standard patent application filed on 27 March 2001 credited to Kim, Byung-Uk ; Oh, Chang-Il ; Park, Mi-Sun ; Lee, Ki-Beom ; Kim, Jong-Min