Production method of iii nitride compound semiconductor substrate and semiconductor device
A Standard patent application filed on 02 March 2001 credited to Koike, Masayoshi ; Tezen, Yuta ; Nagai, Seiji

Details

Application number :

2001236076  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Production method of iii nitride compound semiconductor substrate and semiconductor device  

Inventor :

Koike, Masayoshi ; Tezen, Yuta ; Nagai, Seiji  

Agent name :

 

Address for service :

 

Filing date :

02 March 2001  

Associated companies :

 

Applicant name :

Toyoda Gosei Co. Ltd.  

Applicant address :

 

Old name :

 

Original Source :

Go  

Same Inventor

• Production method of iii nitride compound semiconductor and iii...