How to arrange the inter-atomic and intra-molecular bond structures of silicon and carbon to form high grade graphene in gel and solid phases. Method for production of graphene by formation of a porous graphene silicon gel harnessing zwitterionic and hyper-valence activity involving moderate 2D bonding and having high charge carrier mobility presenting a material having superconductivity.
A Provisional patent application filed on 30 May 2014 credited to Nunn, Garry Robert
Details
Application number :
2014902078
Application type :
Provisional
Application status :
FILED
Under opposition :
No
Proceeding type :
Invention title :
How to arrange the inter-atomic and intra-molecular bond structures of silicon and carbon to form high grade graphene in gel and solid phases. Method for production of graphene by formation of a porous graphene silicon gel harnessing zwitterionic and hyper-valence activity involving moderate 2D bonding and having high charge carrier mobility presenting a material having superconductivity.